View 2N7000_337262.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2N7000
Preferred Device
Small Signal MOSFET 200 mAmps, 60 Volts
N-Channel TO-92
MAXIMUM RATINGS
Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 200 500 350 2.8 -55 to +150 mW mW/C C S G Unit Vdc Vdc Vdc Vpk mAdc
http://onsemi.com
200 mAMPS 60 VOLTS RDS(on) = 5
N-Channel D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 357 300 Unit C/W C 12 3 TO-92 CASE 29 Style 22
MARKING DIAGRAM & PIN ASSIGNMENT
2N7000 YWW
1 Source 2 Gate Y WW
3 Drain
= Year = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
November, 2000 - Rev. 5
Publication Order Number: 2N7000/D
2N7000
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS - - IGSSF - 1.0 1.0 -10 60 - Vdc
Adc mAdc nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) On-State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) VGS(th) rDS(on) - - VDS(on) - - Id(on) gfs 75 100 2.5 0.45 - - mAdc mhos 5.0 6.0 Vdc 0.8 3.0 Vdc Ohm
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance ( (VDS = 25 V, VGS = 0, , , f = 1 0 MH ) 1.0 MHz) Ciss Coss Crss - - - 60 25 5.0 pF
SWITCHING CHARACTERISTICS (Note 1.)
Turn-On Delay Time Turn-Off Delay Time (VDD = 15 V, ID = 500 mA, RG = 25 W, RL = 30 W, Vgen = 10 V) ton toff - - 10 10 ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
http://onsemi.com
2
2N7000
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -55C 125C 25C
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA
Figure 3. Temperature versus Static Drain-Source On-Resistance
Figure 4. Temperature versus Gate Threshold Voltage
ORDERING INFORMATION
Device
2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1
Package
TO-92 TO-92 TO-92 TO-92 TO-92
Shipping
1000 Unit/Box 2000 Tape & Reel 2000 Ammo Pack 2000 Ammo Pack 2000 Ammo Pack
http://onsemi.com
3
2N7000
PACKAGE DIMENSIONS
TO-92 CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
DIM A B C D G H J K L N P R V
STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
http://onsemi.com
4
2N7000/D

▲Up To Search▲

Price & Availability of 2N7000

	To Download 2N7000 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .